MPSA13(Old_V) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
MPSA13 Datasheet PDF : 3 Pages
| |||
UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MPSA13 is a Darlington transistor.
1
FEATURES
*Collector-Emitter Voltage: VCES = 30V
*Collector Dissipation: Pc (mas) = 625 mW
SOT-89
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCES
Emitter-Base Voltage
VEBO
Collector Dissipation
Pc
Collector Current
Ic
Junction Temperature
Tj
Storage Temperature
TSTG
1: EMITTER 2: COLLECTOR 3: BASE
VALUE
30
30
10
625
500
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
BVCES
Ic=100µA,IB=0
Collector Cut-Off Current
ICBO
VCB=30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=10V,Ic=0
DC Current Gain
hFE
VCE=5V,Ic=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=100mA,IB=0.1mA
Base-Emitter on Voltage
VBE(on)
VCE=5V,Ic=100mA
Current Gain Bandwidth Product
fT
VCE=5V,Ic=10mA,
f=100MHz
Pulse test: Pulse Width<300µs, Duty Cycle=2%
MIN MAX
30
100
100
10000
1.5
2.0
125
UNIT
V
nA
nA
V
V
MHz
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R208-001,B
Share Link: 