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Part Name
Description
MS1076 View Datasheet(PDF) - Microsemi Corporation
Part Name
Description
Manufacturer
MS1076
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Microsemi Corporation
MS1076 Datasheet PDF : 6 Pages
1
2
3
4
5
6
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
Symbol
Test Conditions
BV
CES
BV
CEO
BV
EBO
I
CEO
I
CES
H
FE
I
C
= 100 mA
I
C
= 200 mA
I
E
= 20 mA
V
CE
= 30 V
V
CE
= 35 V
V
CE
= 5 V,
I
C
= 7 A
MS1076
Min.
70
35
4.0
---
---
15
Value
Typ.
---
---
---
---
---
---
Max.
---
---
---
5
5
60
Unit
V
V
V
mA
mA
---
DYNAMIC
Symbol
Test Conditions
P
OUT
G
P
η
C
IMD
C
OB
Conditions
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 30 MHz
f = 1 MHz
f1 = 30.000 MHz
V
CE
= 28 V
I
CQ
= 750 mA
V
CE
= 28 V I
CQ
= 750 mA
V
CE
= 28 V I
CQ
= 750 mA
V
CE
= 28 V I
CQ
= 750 mA
V
CB
= 28 V
f2 = 30.001 MHz
HFE BINNING (marked on lid with appropriate letter):
A = 15-19
D = 27-32
G = 45-50
B = 19-22.5
E = 32-38
H = 50-55
C = 22.5-27
F = 38-45
I = 55-60
IMPEDANCE DATA
FREQ
Z
IN
30 MHz 1.2 + j0.41
Z
CL
1.25 + j1.92
Min.
220
12
40
---
---
Value
Typ.
---
---
---
---
450
Max.
---
---
---
-30
---
Unit
WPEP
dB
%
dBc
pf
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.microsemi.com
or contact our factory direct.
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