MS2223 View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
Manufacturer
MS2223 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
· GOLD METALLIZATION
· EMITTER SITE BALLASTED
· Pout = 70 W MINIMUM
· Gp = 6.7 dB
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· LOW THERMAL RESISTANCE
DESCRIPTION:
The MS2223 is a silicon NPN bipolar transistor designed for
avionics applications with high duty cycle requirements. Gold
metallization and emitter ballasting provides long term
reliability under long pulse formats.
MS2223
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCC
IC
PDISS
TJ
TSTG
Parameter
Collector-Supply Voltage*
Device Current*
Power Dissipation*
Junction Temperature
Storage Temperature
Value
32
8.0
200
200
- 65 to + 200
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance*
* Applies only to rated RF operation.
0.68
Unit
V
A
W
°C
°C
°C/W
MSC0XXXA.DOC 5-13-99
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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