NCV8402 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NCV8402 Datasheet PDF : 10 Pages
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NCV8402, NCV8402A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
V
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
VDGR
42
V
Gate−to−Source Voltage
VGS
"14
V
Continuous Drain Current
ID
Internally Limited
Power Dissipation
@ TA = 25°C (Note 1)
PD
@ TA = 25°C (Note 2)
@ TT = 25°C (Note 1)
1.1
W
1.7
8.9
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
RqJA
RqJA
RqJT
114
°C/W
72
14
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
EAS
150
mJ
Load Dump Voltage
(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
VLD
87
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
ID
IG
+
VGS
GATE
DRAIN
SOURCE
VDS
−
−
Figure 1. Voltage and Current Convention
http://onsemi.com
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