NCV8450(2010) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NCV8450
(Rev.:2010)

Self-Protected High Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8450

MAXIMUM RATINGS

Value

Rating

Symbol

Min

Max

Unit

DC Supply Voltage (Note 1)

Load Dump Protection

(RI = 2 W, td = 400 ms, VIN = 0, 10 V, IL = 150 mA, Vbb = 13.5 V)

Input Current

Output Current (Note 1)

Total Power Dissipation

@ TA = 25°C (Note 2)

@ TA = 25°C (Note 3)

Electrostatic Discharge (Note 4)

(Human Body Model (HBM) 100 pF/1500 W)

Input

All other

VD

VLoaddump

Iin

Iout

PD

−16

45

V

100

V

−15

15

mA

Internally Limited

A

W

1.13

1.60

kV

1

5

Single Pulse Inductive Load Switching Energy (Note 4)

EAS

(VDD = 13.5 V, I = 465 mApk, L = 200 mH, TJStart = 150°C)

29

mJ

Operating Junction Temperature

TJ

−40

+150

°C

Storage Temperature

Tstorage

−55

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.

2. Minimum Pad.

3. 1 in square pad size, FR−4, 1 oz Cu.

4. Not subjected to production testing.

THERMAL RESISTANCE RATINGS

Parameter

Thermal Resistance (Note 5)

Junction−to−Ambient (Note 2)

Junction−to−Ambient (Note 3)

5. Not subjected to production testing.

Symbol

RqJA

RqJA

Max Value

110

78.3

Unit

K/W

−+

IIN

IN

ID

VD

VOUT

OUT

NCV8450

Figure 2. Applications Test Circuit

http://onsemi.com

3

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