NCV8452STT1G(2012) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NCV8452STT1G
(Rev.:2012)
(Rev.:2012)
ON Semiconductor
NCV8452STT1G Datasheet PDF : 13 Pages
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NCV8452
TYPICAL CHARACTERISTIC CURVES
3
RL = 24 W
2.5
VD = 35 V
2
1.5
1
VD = 13.5 V
VD = 5 V
0.5
0
−50 −25 0
25 50 75 100 125 150 175
TJ (°C)
Figure 34. Slew Rate Off vs. Junction
Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
150°C
100°C
25°C
−40°C
0.2
0.4
0.6
0.8
1.0
1.2
VOUT − VD (V)
Figure 36. Power FET Body Forward
Characteristics
1.0
150°C
0.8
100°C
0.6
0.4
25°C
−40°C
0.2
0
0
0.2
0.4
0.6
0.8
1.0 1.2
−VD (V)
Figure 35. Supply−to−Ground Reverse
Characteristics
10
VD = 13.5 V,
RL = 0 W
TJstart = 25°C
1
TJstart = 150°C
0.1
10
100
1000
10000
L (mH)
Figure 37. Single Pulse Maximum Switch Off
Current vs. Load Inductance
1000
VD = 13.5 V,
RL = 0 W
100
TJstart = 25°C
TJstart = 150°C
1000
100
10
RL = 0 W
No heatsink attached
TJstart = 25°C
TJstart = −40°C
10
1
1
10
100
1000
10000
L (mH)
Figure 38. Single Pulse Maximum Switch Off
Energy vs. Load Inductance
1
TJstart = 150°C
0.1
0
TJstart = 100°C
5 10 15 20 25 30 35 40
VD (V)
Figure 39. Initial Short−Circuit Shutdown Time
vs. Supply Voltage
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