NCV8460A(2012) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NCV8460A
(Rev.:2012)
(Rev.:2012)
ON Semiconductor
NCV8460A Datasheet PDF : 16 Pages
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NCV8460A
MAXIMUM RATINGS
Value
Rating
DC Supply Voltage
Peak Transient Input Voltage
(Load Dump 51.5 V, VD = 13.5 V, ISO7637−2 pulse 5)
Input Voltage
Input Current
Output Current (Note 1)
Symbol
Min
VD
−16
Vpeak
Max
Unit
42
V
65
V
Vin
−8
8
V
Iin
−5
5
mA
Iout
−6
Internally
A
Limited
Negative Ground Current
−Ignd
−200
−
mA
Status Current
Istatus
−5
5
mA
Power Dissipation, Tc = 25°C
Ptot
1.183
W
Electrostatic Discharge
(HBM Model 100 pF / 1500 W)
Input
Status
Output
VD
DC
4
kV
3.5
kV
5
kV
5
kV
Single Pulse Inductive Load Switching Energy (Note 2)
(L = 1.8 mH, Vbat = 13.5 V; IL = 9 A, TJstart = 150°C)
EAS
100
mJ
Operating Junction Temperature
TJ
−40
+150
°C
Storage Temperature
Tstorage
−55
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance
Junction−to−Lead
Junction−to−Ambient (min. Pad)
Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)
Symbol
RqJL
RqJA
RqJA
Max Value
72
110.8
105.6
Unit
°C/W
°C/W
°C/W
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