NIF5003N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
RDS(on)
RDS(on)
VSD
SWITCHING CHARACTERISTICS
Turn−on Time
(Vin to 90% ID)
Turn−off Time
(Vin to 10% ID)
Slew Rate On
Slew Rate Off
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
T(on)
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
T(off)
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
−dVDS/dton
dVDS/dtoff
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
(VGS = 5.0 Vdc)
ILIM
VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)
Current Limit
(VGS = 10 Vdc)
ILIM
VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)
Temperature Limit (Turn−off)
VGS = 5.0 Vdc
TLIM(off)
Thermal Hysteresis
VGS = 5.0 Vdc
DTLIM(on)
Temperature Limit (Turn−off)
VGS = 10 Vdc
TLIM(off)
Thermal Hysteresis
VGS = 10 Vdc
DTLIM(on)
Input Current during Thermal Fault
VDS = 35 V, (VGS = 5.0 V, Tj = 150°C)
Ig(fault)
Input Current during Thermal Fault
VDS = 35 V, (VGS = 10 V, Tj = 150°C)
Ig(fault)
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
Electro−Static Discharge Capability
Machine Model (MM)
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
ESD
Min
42
40
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
12
7.0
18
13
150
−
150
−
0.6
2.0
4000
400
Typ
46
45
0.6
2.5
50
1.7
5.0
53
95
63
105
0.95
16
80
1.4
0.5
18
13
22
18
175
15
165
15
−
−
−
−
Max Unit
51
Vdc
51 mV/°C
mAdc
5.0
−
125 mAdc
2.2
Vdc
−
mV/°C
mW
68
123
mW
76
135
1.1
V
20
ms
100
ms
−
V/ms
−
V/ms
24
Adc
18
30
Adc
25
200
°C
−
°C
185
°C
−
°C
−
mA
−
mA
−
V
−
V
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