NTE2992 View Datasheet(PDF) - NTE Electronics
Part Name
Description
Manufacturer
NTE2992 Datasheet PDF : 2 Pages
| |||
NTE2992
MOSFET
N - Channel, Enhancement Mode
High Speed Switch
Features:
D 4V Gate Drive
D Low Drain - Source On - Resistance
D High Forward Transfer Admittance
D Low Leakage Current
Applications:
D Switching Regulators
D UPS
D DC - DC Converters
D General Purpose Power Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain - Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Drain - Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate - Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Maximum Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55° to +150°C
Thermal Resistance, Junction - to - Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction - to - Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.77°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain- Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate- Source Leakage Current
Drain- Source On - State Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
V(BR)DSS ID = 10mA, VGS = 0V
VGS(th) ID = 1mA, VDS = 10V
IDSS VDS = 600V, VGS = 0V
IGSS VGS = ±25V, VDS = 0V
RDS(on) ID = 3A, VGS = 10V
gfs ID = 3A, VDS = 10V
Ciss VDS = 10V, VGS = 0V, f = 1MHz
Coss
Reverse Transfer Capacitance
Crss
Min Typ Max Unit
600 -
-
V
1.5 - 3.5 V
-
- 300 µA
-
- ±100 nA
- 0.95 1.25 Ω
3
4
-
S
- 1400 2000 pF
- 75 120 pF
- 250 380 pF
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