NTE2992 View Datasheet(PDF) - NTE Electronics

Part Name

Description

Manufacturer

NTE2992

MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Turn - On Time

Rise Time

Turn - Off Time

td(on)

tr

td(off)

VDD = 300V, ID = 3A, VGS = 10V,

RL = 100Ω

- 40 80 ns

- 25 50 ns

- 85 170 ns

Fall Time

tf

- 20 40 ns

Total Gate Charge

Qg VDD = 400V, VGS = 10V, ID = 6A

- 56 110 nC

Gate- Source Charge

Qgs

- 32 - nC

Gate- Drain (“Miller”) Charge

Qgd

- 24 - nC

Source- Drain Diode Ratings and Characteristics: (TA = +25°C unless otherwise specified)

Continuous Drain Reverse Current

IDR

-

-

6

A

Pulse Drain Reverse Current

IDRP

-

- 24 A

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovered Charge

VDSF

trr

Qrr

IDR = 6A, VGS = 0V

IDR = 6A, VGS = 0V,

dIDR/dt = 100A/µs

-

-

-2 V

- 460 - ns

- 3.5 - µC

.114 (2.9)

.181 (4.6).126 (3.2) Dia Max

Max

.405 (10.3)

Max

Isol

.252

(6.4)

.622

(15.0)

Max

G DS

.118

(3.0)

Max

.531

(13.5)

Min

.098 (2.5)

.100 (2.54)

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