NTB75N06L View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
NTB75N06L Datasheet PDF : 7 Pages
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NTP75N06L, NTB75N06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 5.0 Vdc, ID = 37.5 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 2)
(VGS = 5.0 Vdc, ID = 75 Adc)
(VGS = 5.0 Vdc, ID = 37.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 2) (VDS = 15 Vdc, ID = 37.5 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc, RG = 9.1 W) (Note 2)
tr
td(off)
Fall Time
tf
Gate Charge
QT
(VDS = 48 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc) (Note 2)
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 75 Adc, VGS = 0 Vdc) (Note 2)
VSD
(IS = 75 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
trr
(IS = 75 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 2)
ta
tb
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
Typ
Max
Unit
60
72
−
74
Vdc
−
−
mV/°C
mAdc
−
−
10
−
−
100
−
−
±100
nAdc
Vdc
1.0
1.58
2.0
−
6.0
−
mV/°C
mW
−
9.0
11
Vdc
−
0.75
0.99
−
0.61
−
−
55
−
mhos
−
3122 4370
pF
−
1029 1440
−
276
390
−
22
32
ns
−
265
370
−
113
160
−
170
240
−
66
92
nC
−
9.0
−
−
47
−
−
1.0
1.15
Vdc
−
0.9
−
−
70
−
ns
−
43
−
−
27
−
−
0.16
−
mC
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