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Part Name
Description
P4C174-8JC View Datasheet(PDF) - Semiconductor Corporation
Part Name
Description
Manufacturer
P4C174-8JC
HIGH SPEED 8K x 8 CACHE TAG STATIC RAM
Semiconductor Corporation
P4C174-8JC Datasheet PDF : 12 Pages
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P4C174
AC CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Symbol
Parameter
–8
–10
Min Max Min Max
t
RC
Read Cycle Time
8
10
t
AA
Address Access
Time
8
10
t
OH
Address Change to 3
3
Output Change
–12
Min Max
12
12
3
–15
Min Max
15
15
3
–20
Min Max
20
20
3
–25
Min Max
25
25
3
t
AC
Chip Enable LOW to
8
Output Valid
10
12
15
20
25
t
LZ
Chip Enable LOW
3
3
3
3
3
3
to Output LOW-Z
(1)
t
HZ
Chip Enable HIGH
5
to Output HIGH -Z
(1)
5
5
8
8
10
t
OE
Output Enable LOW
5
6
6
8
10
12
to Output Valid
t
OLZ
Output Enable LOW 0
0
0
0
0
0
to Output LOW-Z
(1)
t
OHZ
Output Enable HIGH
5
to Output HIGH -Z
(1)
5
5
5
8
10
t
PU
Chip Enable LOW or 0
0
0
0
0
0
Address Change to
Powerup
t
pUPD
Powerup to
Powerdown
20
20
20
20
20
25
Note:
1. Transition is measured ± 200 mV from steady state voltage with Output Load B.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
READ CYCLE NO. 1 (
OE
CONTROLLED)
(2, 3)
Document #
SRAM118
REV C
Page 4 of 12
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