HYS64V32200GU-8B View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

HYS64V32200GU-8B

PC100-168 pin unbuffered DIMM Modules

Infineon Technologies 

HYS 64(72)V16200/3222(0)0/64220GU

SDRAM Modules

AC Characteristics (cont’d) 1, 2

TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns

Parameter

Symbol

Limit Values

-8

PC100-222

-8B

PC100-323

min. max. min. max.

Unit Note

Refresh Cycle

Self Refresh Exit Time

tSREX

10

Refresh Period

tREF

64

Refresh Interval

128Mbit SDRAM based modules

–

256Mbit SDRAM based modules

–

–

10

–

64

15.6 –

7.8

–

–

–

15.6

7.8

ns 9

ms 6

µs

µs

Read Cycle

Data Out Hold Time

tOH

3

–

3

–

ns 2

Data Out to Low Impedance Time tLZ

0

–

0

–

ns

Data Out to High Impedance

tHZ

3

8

3

10

ns 8

Time

DQM Data Out Disable Latency tDQZ

–

2

–

2

CLK

Write Cycle

Data Input to Precharge

(write recovery)

Data In to Active/Refresh

DQM Write Mask Latency

tWR

2

–

2

–

CLK

tDAL

5

–

5

–

CLK

tDQW

0

–

0

–

CLK

Semiconductor Group

10

1998-08-01

Share Link: