PHD24N03LT View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
PHD24N03LT Datasheet PDF : 13 Pages
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Philips Semiconductors
PHD24N03LT
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 10
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 10 A;
Figure 8 and 9
Tj = 25 °C
VGS = 5 V; ID = 10 A;
Figure 8 and 9
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
gfs
forward transconductance VDS = 10 V; ID = 10 A;
Figure 12
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-off rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
ID = 20 A; VDS = 15 V;
VGS = 5 V; Figure 15
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 13
VDD = 15 V; RD = 0.75 Ω;
VGS = 5 V; RG = 10 Ω
VSD
source-drain (diode forward) IS = 10 A; VGS = 0 V;
voltage
Figure 14
trr
reverse recovery time
IS = 10 A;
Qr
recovered charge
dIS/dt = −100 A/µs;
VGS = 0 V; VDS = 25 V
Min
Typ
Max
Unit
30
40
−
V
27
−
−
V
1
1.5
2
V
0.5
−
−
V
−
−
2.3
V
−
0.05
10
µA
−
5.0
500
µA
−
10
100
nA
−
28
50
mΩ
−
38
56
mΩ
−
70
104
mΩ
−
13
−
S
−
10
−
nC
−
2.7
−
nC
−
5.7
−
nC
−
460
−
pF
−
143
−
pF
−
107
−
pF
−
18
−
ns
−
130
−
ns
−
22
−
ns
−
45
−
ns
−
0.95
1.5
V
−
65
−
ns
−
75
−
nC
9397 750 07311
Product specification
Rev. 02 — 27 July 2000
© Philips Electronics N.V. 2000. All rights reserved.
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