PJP10N65 / PJF10N65
Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)
12
ID =10A
10
VDS=520V
8
VDS=325V
VDS=130V
6
4
2
0
0 4 8 12 16 20 24 28 32 36 40
Qg - Gate Charge (nC)
Fig. 7 Gate Charge Waveform
1.2
ID = 250µA
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
100
VGS = 0V
10
TJ = 125oC
1
0.1
25oC
-55oC
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4
VSD - Source-to-Drain Voltage (V)
Fig.8 Source-Drain Diode Forward Voltage
STAD-DEC.25.2009
PAGE. 4