;;Gate Characteristics
2
101
5
2
Peak Forward Gate Voltage(10V)
PowAev(rer3aWge)GatePPoewaek(rG1a0teW)
100
5
125℃ 25℃ −30℃
2
Maximum Gate Voltage that will not trigger any unit
10−1
101 2
5 102 2
5 103 2
5
Gate Curren(t mA)
Average On-State Current Vs Power Dissipation
(Single phase half wave)
260
240
220
D.C.
Per one element
200
180
θ=180゜
160
140
120
100
80
θ=120゜
θ=90゜
θ=60゜
θ=30゜
2
360。
60
: Conduction Angle
40
20
0
20 40 60 80 100 120 140 160 180 200 220
Average On-State Curren(t A)
Surge On-State Current Rating
(Non-Repetitive)
5000
4000
Per one element
Tj=25℃ start
3000
2000
60Hz
50Hz
1000
0
100
2
5
101
2
Time(cycles)
5
102
Output Current
1000 Conduction Angle 180゜ W3
B6
W1;Bidirectional connection
Id(Ar.m.s.)
800
B2
600
400
W1
200
0
0 100 200 300
Output Curren(t A)
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0.05℃/W
90
100
110
120
125
0 20 40 60 80 100120
Ambient Temperature(℃)
PK(PD,PE,KK)130F
On-State Voltage max
2
103
5
2
102
5
2
10
0.5
1.0
1.5
2.0
2.5
3.5
On-State Voltage(V)
Average On-State Current Vs Maximum Allowable
Case Temperature(Single phase half wave)
130
120
Per one element
110
100
90
2
360。
: Conduction Angle
80
70
θ=30゜ θ=60゜θ=90゜θ=120゜θ=180゜
D.C.
60
50
0 20 40 60 80 100 120 140 160 180 200 220
Average On-State Curren(t A)
Transient Thermal Impedance
0.2
Per one element
Junction to case
0.1
0
10−3
10−2
10−1
100
101
Time t(sec)
B2;Two Pluse bridge connection
B6;Six pulse bridge connection
W3;Three phase
bidiretional connection
Id(Aav.)
Id(Aav.)
90
Id(Ar.m.s.)
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0.05℃/W
90
100
110
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0.05℃/W
100
110
120
120
125
125
0 20 40 60 80 100120 0 20 40 60 80 100120
Ambient Temperature(℃) Ambient Temperature(℃)