PMBT3906YS,115 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
Manufacturer
PMBT3906YS,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
PMBT3906YS
40 V, 200 mA PNP/PNP general-purpose double transistor
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Per transistor
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current
single pulse;
-
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation Tamb ≤ 25 °C
[1] -
Per device
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
[1] -
-
−55
−65
Max Unit
−40
V
−40
V
−6
V
−200 mA
−200 mA
−100 mA
230
mW
350
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
400
Ptot
(mW)
300
006aab113
200
100
0
−75
−25
25
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve
75
125
175
Tamb (°C)
PMBT3906YS_2
Product data sheet
Rev. 02 — 13 May 2009
© NXP B.V. 2009. All rights reserved.
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