Philips Semiconductors
PMP4501G; PMP4501Y
NPN/NPN matched double transistors
Table 8: Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per device
hFE1/hFE2 hFE matching
VBE1 − VBE2 VBE matching
VCE = 5 V;
IC = 2 mA
VCE = 5 V;
IC = 2 mA
Min
Typ
[3] 0.95
1
[4] -
-
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Max Unit
-
2
mV
PMP4501G_Y_2
Product data sheet
Rev. 02 — 14 February 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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