Philips Semiconductors
Triacs
Product specification
BT136F series
12 IT(RMS) / A
BT136
10
8
6
4
2
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 92˚C.
VGT(Tj)
1.6 VGT(25 C)
BT136
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
3 IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
IGT(Tj)
3 IGT(25 C)
2.5
2
BT136
T2+ G+
T2+ G-
T2- G-
T2- G+
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IT / A
12
Tj = 125 C
Tj = 25 C
10
Vo = 1.27 V
Rs = 0.091 ohms
8
BT136
typ
max
6
4
2
0
0
0.5
1
1.5
2
2.5
3
VT / V
Fig.10. Typical and maximum on-state characteristic.
February 1996
4
Rev 1.100