R3130N/R3131N
• R3131N40xx-TR
Symbol
Item
Conditions
Min.
Typ.
[Topt=25°C]
Max. Unit
VDDH Maximum Operating Voltage
6.0
V
VDDL ∗3 Minimum Operating Voltage
CMOS
Output
Nch Open
Drain Output
IOH=−10µA
VDS=6.5V
0.90 1.00
V
VDET Detector Threshold
3.940 4.000 4.060 V
ISS1 Supply Current1
VDD=6.00V
1.40 5.00 µA
ISS2 Supply Current2
VDD=3.90V
1.30 4.00 µA
ISS3 Supply Current3
VDD=4.10V
1.15 3.50 µA
VOH “H” Output Voltag
VDD=3.90V, IOUT=−800µA 0.8×VDD 0.95×VDD
V
VOL “L” Output Voltage
Tdelay ∗2 Output Delay Time for release
∆VDET/ Detector Threshold
∆Topt Temperature Coefficient
VDD=4.10V, IOUT=3.2mA
0.18 0.40
V
Refer to electrical characteristics by Output Delay Time for release
−40°C <= Topt <= 85°C
±100
ppm/°C
• R3131N44xx-TR
Symbol
Item
Conditions
Min.
Typ.
[Topt=25°C]
Max. Unit
VDDH Maximum Operating Voltage
6.0
V
VDDL ∗3 Minimum Operating Voltage
CMOS
Output
Nch Open
Drain Output
IOH=−10µA
VDS=6.5V
0.90 1.00
V
VDET Detector Threshold
4.334 4.400 4.466 V
ISS1 Supply Current1
VDD=6.00V
1.40 5.00 µA
ISS2 Supply Current2
VDD=4.50V
1.30 4.00 µA
ISS3 Supply Current3
VDD=4.30V
1.15 3.50 µA
VOH “H” Output Voltage
VDD=4.30V, IOUT=−800µA 0.8×VDD 0.95×VDD
V
VOL “L” Output Voltage
VDD=4.50V, IOUT=3.2mA
0.18 0.40
V
Tdelay ∗2 Output Delay Time for release Refer to electrical characteristics by Output Delay Time for release
∆VDET/ Detector Threshold
∆Topt Temperature Coefficient
−40°C <= Topt <= 85°C
±100
ppm/°C
10