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Part Name
Description
MJ2501 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
MJ2501
COMPLEMENTARY POWER DARLINGTONS
Comset Semiconductors
MJ2501 Datasheet PDF : 3 Pages
1
2
3
THERMAL CHARACTERISTICS
Symbol
Ratings
R
thJ-C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
MJ2500
MJ3000
MJ2501
MJ3001
Value
1.17
Unit
°C/W
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
BV
CEO
I
CEO
I
EBO
I
CER
V
CE(SAT)
V
BE
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Emitter Cutoff Current
I
C
=100 mAdc, I
B
=0
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
V
BE
=5.0 Vdc, I
C
=0
MJ2500
MJ3000
60
-
MJ2501
MJ3001
80
-
-
Vdc
-
MJ2500
MJ3000
-
MJ2501
MJ3001
-
-
1.0 mAdc
-
MJ2500
MJ3000
MJ2501
-
- 2.0 mAdc
MJ3001
V
CB
=60 V, R
BE
=1.0 k ohm
MJ2500
MJ3000
-
Collector-Emitter Leakage
Current
V
CB
=80 V, R
BE
=1.0 k ohm
V
CB
=60 V, R
BE
=1.0 k ohm,
T
C
=150°C
MJ2501
MJ3001
MJ2500
MJ3000
-
-
V
CB
=80 V, R
BE
=1.0 k ohm,
T
C
=150°C
MJ2501
MJ3001
-
MJ2500
Collector-Emitter saturation
Voltage (*)
I
C
=5.0 A, I
B
=20 mAdc
MJ3000
MJ2501
-
MJ3001
MJ2500
I
C
=10 A, I
B
=50 mAdc
MJ3000
MJ2501
-
MJ3001
MJ2500
Base-Emitter Voltage (*)
I
C
=5.0 Adc, V
CE
=3.0Vdc
MJ3000
MJ2501
-
MJ3001
-
1.0
-
mAdc
-
5.0
-
- 2.0
Vdc
- 4.0
-
3
V
Page 2 of 3
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