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Part Name
Description
RN2005 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
RN2005
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Toshiba
RN2005 Datasheet PDF : 6 Pages
1
2
3
4
5
6
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN2001~2006
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
RN2001~2006
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
RN2001~2004
RN2005, 2006
RN2001~2006
RN2001~2006
RN2001
RN2002
RN2003
RN2004
RN2005
RN2006
RN2001~2004
RN2005
RN2006
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test
Circuit
Test Condition
―
V
CB
=
−
50V, I
E
= 0
V
CE
=
−
50V, I
B
= 0
V
EB
=
−
10V, I
C
= 0
―
V
EB
=
−
5V, I
C
= 0
―
V
CE
=
−
5V,
I
C
=
−
10mA
―
II
CB
=
=
−
5mA,
−
0.25mA
―
IV
CC
=
E
=
−
0.2V,
−
5mA
―
V
CE
=
−
5V,
I
C
=
−
0.1mA
―
V
CE
=
−
10V,
I
C
=
−
5mA
―
V
CB
=
−
10V, I
E
= 0,
f = 1MHz
―
―
RN2001
~
RN2006
Min Typ. Max Unit
―
― −
100
nA
―
― −
500
−
0.82
― −
1.52
−
0.38
― −
0.71
−
0.17
―
−
0.082
―
−
0.33
mA
−
0.15
−
0.078
― −
0.145
−
0.074
― −
0.138
30
―
―
50
―
―
70
―
―
80
―
―
80
―
―
80
―
―
―
−
0.1
−
0.3
V
−
1.1
― −
2.0
−
1.2
― −
2.4
−
1.3
― −
3.0
V
−
1.5
― −
5.0
−
0.6
― −
1.1
−
0.7
― −
1.3
−
1.0
― −
1.5
V
−
0.5
― −
0.8
―
200
―
MHz
―
3
6
pF
3.29 4.7 6.11
7
10
13
15.4 22 28.6
k
Ω
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9
1.0
1.1
0.0421 0.0468 0.0515
0.09 0.1 0.11
2
2001-06-07
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