RSB12Z(2008) View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
Manufacturer
RSB12Z Datasheet PDF : 3 Pages
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Diodes
RSB12Z
Low Capacitance Protection Device
RSB12Z
zApplication
ESD Protection
zFeatures
1) Ultra small mold type. (VMD3)
2) Low capacitance
3) Bi direction
zConstruction
Silicon Epitaxial Planar
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
0.4
1.2±0.1
0.32±0.05
(3)
0.22±0.05
(1)
(2)
0.22±0.05
0.4
0.4
0.13±0.05
0～0.1
0.5±0.05
0.4
0.5
0.8
VMD3
zStructure
ROHM : VMD3
dot(year week factory)
zTaping specifications (Unit : mm)
4.0±0.07
2.0±0.04
φ1.55±0.05
0.3±0.1
1.3±0.05
0
(4.0±0.1)
2.0±0.05
φ0.5±0.05
0.6±0.05
0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
P
150
mW
Tj
150
℃
Tstg
-55 to +150
℃
zElectrical characteristics (Ta=25°C)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol Min.
VZ
9.6
IR
-
Ct
-
Typ. Max.
- 14.4
- 0.10
1
-
Unit
Conditions
V
IZ=5mA
µA
VR=9V
pF
f=1MHz,VR=0V
1/2
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