SI2301ADS View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
SI2301ADS Datasheet PDF : 4 Pages
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New Product
Si2301ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V
8
8
6
6
2V
4
4
Transfer Characteristics
TC = –55_C
25_C
125_C
2
0, 0.5, 1 V
1.5 V
0
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
0.4
0.3
0.2
VGS = 2.5 V
VGS = 4.5 V
0.1
0.0
0
2
4
6
8
10
ID – Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 3.6 A
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Capacitance
800
600
Ciss
400
200
Coss
Crss
0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3.6 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Qg – Total Gate Charge (nC)
Document Number: 71835
S-20617—Rev. B, 29-Apr-02
0.6
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
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