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SI3200 View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
Manufacturer
SI3200 Datasheet PDF : 112 Pages
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Si3220/25 Si3200/02
Table 4. 5 V Power Supply Characteristics1
(VDD, VDD1 – VDD4 = 5 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Symbol
Test Condition
Min Typ Max Unit
VDD1 – VDD4 Supply
IVDD1–IVDD4
Current (Si3220/Si3225)
Sleep mode, RESET = 0
Open (high-impedance)
—
1
— mA
—
22
— mA
Active on-hook standby
—
21
— mA
Forward/reverse active off-hook
— 62 + — mA
ILIM +
ABIAS
Forward/reverse active OHT
OBIAS = 4 mA
—
65
— mA
VDD Supply Current
(Si3200/2)
IVDD
Ringing, VRING = 45 Vrms,
VBAT = –70 V, 1 REN load2
Sleep mode, RESET = 0
Open (high-impedance)
—
31
— mA
—
110
—
µA
—
110
—
µA
Active on-hook standby
—
110
—
µA
Forward/reverse active off-hook,
ABIAS = 4 mA, VBAT = –24 V
—
110
—
µA
Forward/reverse OHT, OBIAS = 4 mA,
VBAT = –70 V
—
110
—
µA
Ringing, VRING = 45 Vrms,
VBAT = –70 V,
1 REN load
—
110
—
µA
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "3.14.4. Ringing Power Considerations" on page 54 for current and power consumption under other operating
conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional (VDD + |VBAT|) x ILOOP term.
Rev. 1.3
9

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