SLD323V-21 View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

SLD323V-21

High Power Density 1W Laser Diode

Sony Semiconductor 

High Power Density 1W Laser Diode

SLD323V

Description

The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the

SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

achieved by QW-SCH structure∗2.

∗1 MOCVD: Metal Organic Chemical Vapor Deposition

∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure

Features

• High power

Recommended optical power output: Po = 1.0W

• Low operating current: Iop = 1.4A (Po = 1.0W)

Applications

• Solid state laser excitation

• Medical use

• Material processes

• Measurement

Structure

GaAlAs quantum well structure laser diode

Absolute Maximum Ratings (Tc = 25°C)

• Optical power output

Po

1.1

W

• Reverse voltage

VR LD

2

V

PD

15

V

• Operating temperature (Tc) Topr

–10 to +30 °C

• Storage temperature

Tstg

–40 to +85 °C

Pin Configuration

2

1

3

Bottom View

1. LD cathode

2. PD anode

3. COMMON

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

–1–

E93207A81-PS

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