SLD323V-21 View Datasheet(PDF) - Sony Semiconductor

Part Name

Description

Manufacturer

SLD323V-21

High Power Density 1W Laser Diode

Sony Semiconductor 

SLD323V

Example of Representative Characteristics

Optical power output vs. Forward current characteristics

1500

1200

900

TC = 0°C TC = 25°C

TC = –10°C

TC = 30°C

Optical power output vs. Monitor current characteristics

1000

TC = 25°C

TC = 15°C

TC = 0°C

TC = –10°C

TC = 30°C

600

500

300

0

400 800 1200 1600 2000

IF – Forward current [mA]

Threshold current vs. Temperature characteristics

1000

500

0

0

1.5

Imon – Monitor current [mA]

Power dependence of far field pattern

(Parallel to junction)

TC = 25°C

100

–10

0

10

20

30

Tc – Case temperature [°C]

Power dependence of far field pattern

(Perpendicular to junction)

TC = 25°C

PO = 1000mW

PO = 800mW

PO = 600mW

PO = 400mW

PO = 200mW

–90 –60 –30 0

30 60 90

Angle [degree]

Tempareture dependence of far field pattern

(Parallel to junction)

PO = 1000mW

PO = 1000mW

PO = 800mW

PO = 600mW

PO = 400mW

PO = 200mW

–90 –60 –30 0

30 60 90

Angle [degree]

TC = 25°C

TC = 10°C

TC = –5°C

–90 –60 –30 0

30 60 90

Angle [degree]

–3–

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