SMK0825FC
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
V(BR)DSS ID=250 ㎂, VGS=0V
Gate threshold voltage
VGS(th)
ID=250 ㎂, VDS= VGS
Drain-source cut-off current
IDSS
VDS=250V, VGS=0V
Gate leakage current
IGSS
VDS=0V, VGS=30V
Drain-source on-resistance
④
Forward transfer conductance ④
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGS=10V, ID=4.0A
VDS=10V, ID=4.0A
VGS=0V, VDS=25V
f=1 MHz
VDD=125V, ID=8A
RG=25Ω
③④
VDS=200V, VGS=10V
ID=8A
③④
Min.
250
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
-
-
-
4.0
-
1
-
0.35
7.0
619
141
33
15
85
90
65
14.5
4.0
4.5
100
0.43
-
773
176
41
-
-
-
-
18.2
-
-
Unit
V
V
㎂
㎁
S
㎊
㎱
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
IS
Integral reverse diode
①
ISP
in the MOSFET
-
-
8
-
-
32
Forward voltage
④
VSD
VGS=0V, IS=8A
-
-
1.4
Reverse recovery time
Reverse recovery charge
trr
IS=8A, VGS=0V
Qrr
dIS/dt=100A/㎲
-
178
-
-
1.16
-
Unit
A
V
㎱
C
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=8.9mH, IAS=8A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse width≤300 ㎲, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T0O059-000
2