G1746 View Datasheet(PDF) - Hamamatsu Photonics

Part Name

Description

Manufacturer

G1746

GaAsP photodiode

Hamamatsu Photonics 

sSpectral response

0.3

(Typ. Ta=25 ˚C)

0.25

0.2

0.15

0.1

0.05

0

190

400

600

WAVELENGTH (nm)

800

KGPDB0039EA

GaAsP photodiode G1746, G1747

sPhoto sensitivity temperature characteristic

(Typ.)

+1.5

+1.0

+0.5

0

-0.5

190

400

600

WAVELENGTH (nm)

800

KGPDB0040EA

sRise time vs. load resistance

10 ms

(Typ. Ta=25 ˚C, VR=0 V)

sDark current vs. reverse voltage

1 nA

(Typ. Ta=25 ˚C)

1 ms

100 µs

10 µs

1 µs

G1747

G1746

100 pA

10 pA

1 pA

G1747

G1746

100 ns102

103

104

105

LOAD RESISTANCE (Ω)

106

KGPDB0041EA

100 fA

0.001

0.01

0.1

1

REVERSE VOLTAGE (V)

10

KGPDB0042EA

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