SSF2316E View Datasheet(PDF) - Silikron Semiconductor Co.,LTD.

Part Name

Description

Manufacturer

SSF2316E

Battery protection

Silikron Semiconductor Co.,LTD. 

SSF2316E

GENERAL FEATURES

● VDS = 20V,ID = 7A

RDS(ON) < 35mΩ @ VGS=2.5V

RDS(ON) < 30mΩ @ VGS=3.1V

RDS(ON) < 24mΩ @ VGS=4V

RDS(ON) < 23mΩ @ VGS=4.5V

ESD Rating：2000V HBM

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Application

●Battery protection

●Load switch

●Power management

Schematic diagram

Pin Assignment

DFN3×3-8L BOTTOM VIEW

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

2316E

SSF2316E

DFN3×3-8L

-

Tape width

-

Quantity

-

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

ID

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

Maximum Power Dissipation

PD

Operating Junction and Storage Temperature Range

TJ,TSTG

Limit

20

±12

7

40

1.4

-55 To 150

Unit

V

V

A

A

W

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

RθJA

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

83

℃/W

Min Typ Max Unit

20

V

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