STW40N20(2005) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STW40N20
(Rev.:2005)

N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET

STMicroelectronics 

STB40N20 - STP40N20 - STW40N20

Table 3: Absolute Maximum ratings

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM ( ) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

Tj

Operating Junction Temperature

Tstg

Storage Temperature

( ) Pulse width limited by safe operating area

(1) ISD ≤ 40A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 4: Thermal Data

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering

Purpose

Table 5: Avalanche Characteristics

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value

200

200

± 20

40

25

160

160

1.28

12

-55 to 150

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

TO-220/

62.5

0.78

300

TO-247

50

°C/W

°C/W

°C

Max Value

Unit

40

A

230

mJ

2/13

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