T1610T-6I View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
T1610T-6I Datasheet PDF : 9 Pages
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T16T
Characteristics
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
T16xxT
Unit
T1610T T1620T T1635T
IGT (1) VD = 12 V RL = 30 Ω
VGT
VGD
IH (2)
VD = VDRM, RL = 3.3 kΩ,
Tj = 25 °C
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
IT = 500 mA
I - II - III
10
20
35
MAX.
mA
IV
ALL
MAX.
1.3
V
ALL
I - III
MIN.
0.2
V
MAX. 12
25
40
mA
20
35
50
IL
IG = 1.2 IGT
IV
MAX.
mA
II
30
40
80
dV/dt (2) VD = 67% VDRM, gate open
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Without snubber
(di/dt)c (2)
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Without snubber
Tj = 125 °C
Tj = 150 °C(3)
100 1000 2000
MIN.
V/µs
20
500 1000
8
Tj = 125 °C
4
MIN.
3
6
16
A/ms
Tj = 150 °C(3)
1
3
12
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
3. derating information for excess temperature above Tj max.
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
VTO (1)
RD (1)
ITM = 22.6 A, tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
VD = 0.9 x VDRM
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C(2)
1. for both polarities of A2 referenced to A1.
2. derating information for excess temperature above Tj max.
MAX.
MAX.
MAX.
MAX.
TYP.
Value
Unit
1.55
V
0.85
V
30
mΩ
5
µA
1
mA
1.9
Doc ID 16488 Rev 2
3/9
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