T431616D-5SC View Datasheet(PDF) - Taiwan Memory Technology

Part Name

Description

Manufacturer

T431616D-5SC

1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Taiwan Memory Technology 

tm TE

CH

T431616D/E

Figure 24.2. Precharge Termination of a Burst

(Burst Length=8 or Full Page, CAS# Latency=2)

T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22

CLK

tCK2

CKE High

CS#

RAS#

CAS#

WE#

A11

A10

RAx

RAy

RAz

A0~A9

RAx

CAx

RAy

CAy

RAz

CAz

tWR tRP

tRP

tRP

DQM

DQ

DAx0 DAx1DAx2 DAx3

Ay0 Ay1 Ay2

Az0 Az1 Az2

Activate

Command

Bank A

Write

Command

Bank A

Precharge

Command

Bank A

Precharge Termination

of a Write Burst.

Write data is masked.

Activate

Command

Bank A

Read

Command

Bank A

Precharge

Command

Bank A

Activate

Command

Bank A

Read

Precharge

Command

Command

Bank A

Bank A

Precharge Termination

of a Read Burst

TM Technology Inc. reserves the right

P. 71

to change products or specifications without notice.

Publication Date: FEB. 2007

Revision: A

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