Philips Semiconductors
GreenChip™II SMPS control IC
Product specification
TEA1506P; TEA1506AP;
TEA1506T; TEA1506AT
SYMBOL
PARAMETER
CONDITIONS
Valley switch (pin DRAIN)
∆V/∆tvalley
tvalley-swon
valley recognition voltage change
delay from valley recognition to
switch-on
Overcurrent and short winding protection (pin Isense)
Vsense(max)
tPD
Vswp
tleb
maximum source voltage OCP
propagating delay from detecting
Vsense(max) to switch-off
short winding protection voltage
blanking time for current and short
winding protection
∆V/∆t = 0.1 V/µs
∆V/∆t = 0.5 V/µs
ISS
soft start current
Vsense < 0.5 V
Overvoltage protection (pin DEM)
IOVP(DEM)
OVP level on pin DEM
set by resistor RDEM;
see Section
“OverVoltage
Protection (OVP)”
Overpower protection (pin DEM)
IOPP(DEM)
OPP current on pin DEM to start
OPP correction
IOPP50%(DEM)
OPP current on pin DEM; where
maximum source voltage is limited
to 0.3 V
set by resistor RDEM;
see Section
“OverPower
Protection (OPP)”
Driver (pin DRIVER)
Isource
Isink
Vo(max)
source current capability of driver
sink current capability of driver
maximum output voltage of the
driver
VCC = 9.5 V;
VDRIVER = 2 V
VCC= 9.5 V;
VDRIVER = 2 V
VCC = 9.5 V;
VDRIVER = 9.5 V
VCC > 12 V
Overtemperature protection
Tprot(max)
Tprot(hys)
maximum temperature protection
level
hysteresis for the temperature
protection level
Notes
1. For VCC ≥ 2 V.
2. Guaranteed by design.
MIN.
TYP.
−85 −
−
150(2)
0.48 0.52
−
140
0.83 0.88
300 370
45 60
54 60
−
−24
−
−100
−
−135
−
240
−
560
−
11.5
130 140
−
8(2)
MAX. UNIT
+85 V/µs
−
ns
0.56 V
185 ns
0.96 V
440 ns
75
µA
66
µA
−
µA
−
µA
−
mA
−
mA
−
mA
12
V
150 °C
−
°C
2003 Sep 09
14