TEA5764HN View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

TEA5764HN

FM radio + RDS

Philips Electronics 

Philips Semiconductors

TEA5764HN

FM radio + RDS

Table 1: Electrical parameters general

The listed parameters are valid when a crystal is used that meets the requirements as stated in Table 47; All RF input values

are defined in potential difference, except when EMF is explicitly stated.

Symbol Parameter

Conditions

Min

Typ Max

Unit

VVAFR

right audio output voltage VRF = 1 mV; L = R; ∆f = 22.5 kHz;

55

on pin VAFR

fmod = 1 kHz; no pre-emphasis;

TCdeem = 75 µs

(S+N)/N(m) maximum signal-to-noise VRF = 1 mV; ∆f = 22.5 kHz; L = R;

54

ratio, mono

fmod = 1 kHz; de-emphasis = 75 µs;

BAF = 300 Hz to 15 kHz; A-weighting

filter

66

75

mV

57

-

dB

(S+N)/N(s) maximum signal-to-noise VRF = 1 mV; ∆f = 67.5 kHz; L = R;

50

54

-

dB

ratio, stereo

fmod = 1 kHz; ∆fpilot = 6.75 kHz;

de-emphasis = 75 µs; BAF = 300 Hz

to 15 kHz; A-weighting filter

αcs

channel separation

MST = 0; R = 1 and L = 0 or R = 0

27

33

-

dB

and L = 1; VRF = 30 µV; increasing

RF input level

THD

total harmonic distortion VRF = 1 mV; ∆f = 75 kHz;

-

fmod = 1 kHz; DTC = 0; Baud = 300 Hz

to 15 kHz; A-weighting filter; mono;

L = R; no pilot deviation

0.4 0.9

%

Vsens

RDS sensitivity EMF

∆f = 22.5 kHz; fAF = 1 kHz; L = R;

-

value

SYM1 = 0 and SYM0 = 0; average

over 2000 blocks; block quality

rate ≥ 95 %; ∆fRDS = 2 kHz

15

26

µV

[1] Low-side and high-side selectivity can be measured by changing the mixer LO injection from high-side to low-side.

5. Ordering information

Table 2: Ordering information

Type number

Package

Name

TEA5764HN

HVQFN40

Description

plastic thermal enhanced very thin quad flat package; body

6 × 6 × 0.9 mm

Version

SOT618-1

TEA5764HN_2

Product data sheet

Rev. 02 — 9 August 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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