;Gate Characteristics
2
101
Peak Gate Voltage(10V)
5
2
100
5
−25℃
25℃
125℃
Average
GDiastteributioPPnoweae(kr G10aWte)
Gate Powe(r 1W)
2
Maximum Gate Voltage that will not trigger any unit
10−1
101 2
5 102 2
5 103 2
5
Gate Curren(t mA)
On State Current vs.
Maximum Power Dissipation
24
20
16
12
2
360。
: Conduction Angle
θ=180゜
θ=150゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
8
4
0
0
4
8
12
16
20
RMS On-State Curren(t A)
Ambient temp. vs. RMS On-State Current
20
FIn:Al plate pained black
θ=180゜
16
120゜×3Rth:2.7℃/W
100゜×3Rth:3.3℃/W
12
80゜×3Rth:4.6℃/W
8
Conduction Angle 180゜
Apply following figures for
different conduction angles
4
0
0
θ:150゜:1.05
θ:120゜:1.16
θ: 90゜:1.26
θ: 60゜:1.40
θ: 30゜:1.61
(Rth:heat Sink Thermal Impedance)
20 40 60 80 100 120
140
Maximum Allowable Ambient Temperature(℃)
TG16C/D
On-State Voltage
103
5
2
102
5
2
101
5
0
1
2
3
4
5
On-State Voltage(V)
On State Current vs.
Allowable Case Temperature
130
120
110
100
90
80
2
360。
: Conduction Angle
θ=30゜
θ=60゜
θ=90゜
θ=120゜
θ=150゜
θ=180゜
70
0
4
8
12
16
20
RMS On-State Curren(t A)
Surge On-State Current Rating
(Non-Repetitive)
250
200
Tj=25℃ start
150
100
50
60Hz
50Hz
0
100
2
5
101
2
Time(cycles)
5
102
Transient Thermal Impedance
12
11
10
9
8
7
6
5
4
3
2
1
0
10ー3
10ー2
10ー1
100
101
Time t(sec)
102
12
11
10
9
Fin:Al plate pained black
8
80゜×3t
7
100゜×3t
6
5
120゜×3t
4
3
Junction to case 2
103
1
0
104
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