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TGA2509(2006) View Datasheet(PDF) - TriQuint Semiconductor

Part Name
Description
Manufacturer
TGA2509
(Rev.:2006)
TriQuint
TriQuint Semiconductor 
TGA2509 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Advance Product Information
February 1, 2006
TGA2509
Recommended Assembly Diagram
Bias Procedures:
Vc bias connection is optional, but the
0.1uF cap always needs to be
connected.
For biasing without AGC control:
1. Apply -1.2V to Vg1, and -1.2V to
Vg2.
2. Apply +12V to Vd.
4. Adjust Vg1 to attain 580 mA drain
current (Id)
4. Adjust Vg2 to attain 1080 mA total
drain current (Id).
For biasing with AGC control:
1. Apply -1.2V to Vg1 and -1.2V to Vg2
2. Apply +12V to Vd
3. Apply +2.6V to Vc
4. Adjust Vg1 to attain 580 mA drain
current (Id)
5. Adjust Vg2 to attain 1080 mA total
drain current (Id).
6. Adjust Vc as needed to control gain
level.
9J
1 uF
100pF
5) ,1
5) 287
100pF 100pF 100pF
1 uF
1 uF
9F
9J
9G
To ensure low frequency stability, use 1uF surface mount (not leaded)
capacitors (on the Vd, Vg1, and Vg2 nodes) that are located close to the MMIC.
Contact TriQuint Semiconductor Applications Engineering for more details.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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