TIM1011-5L View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

TIM1011-5L

MICROWAVE POWER GaAs FET

Toshiba 

POWER DISSIPATION vs. CASE TEMPERATURE

50

TIM1011-5L

40

30

20

10

0

0

40

80

120

160

200

Tc (℃)

IM3 vs. OUTPUT POWER CHARACTERISTICS

-10

VDS= 9V

IDS≅ 2.0A

f=11.2 GHz

-20 ∆f= 5MHz

-30

-40

-50

-60

22

24

26

28

30

32

Po (dBm), Single Carrier

Po(dBm), Single Carrier

4

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