TLP630(2007) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TLP630 Datasheet PDF : 9 Pages
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Absolute Maximum Ratings (Ta = 25°C)
TLP630
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta ≥ 39°C)
Peak forward current
(100μs pulse,100pps)
Collector−emitter voltage
Collector−base voltage
Emitter−collector voltage
Emitter−base voltage
Collector current
Power dissipation
Power dissipation derating
(Ta ≥ 25°C)
Operating temperature range
Storage temperature range
Lead soldering temperature
Junction temperature
Total package power dissipation
Total package power dissipation
derating
Isolation voltage
(AC, 1 min., R.H. ≤ 60%)
IF(RMS)
ΔIF / °C
IFPT
VCEO
VCBO
VECO
VEBO
IC
PC
ΔPC / °C
Topr
Tstg
Tsol
Tj
PT
ΔPT / °C
BVS
60
−0.7
±1
55
80
7
7
50
150
−1.5
−55~100
−55~125
260(10s)
125
250
−2.5
5000
mA
mA / °C
A
V
V
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage
Forward current
Collector current
Operating temperature
VCC
―
5
24
V
IF(RMS)
―
16
25
mA
IC
―
1
10
mA
Topr
−25 ―
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
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