TLP705 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TLP705 Datasheet PDF : 7 Pages
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TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705
Plasma Display Panel
Industrial Inverter
IGBT/Power MOS FET Gate Drive
4.58±0.25
654
TLP705
Unit: mm
TLP705 consists of a GaAℓAs light emitting diode and an integrated
photodetector. This unit is 6-lead SDIP package. TLP705 is 50% smaller than
8pin DIP and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs.
123
7.62±0.25
• Peak output current
: ±0.45 A (max)
• Operating frequency
: 250kHz (max)
• Guaranteed performance over temperature : -40 to 100°C
• Supply current
: 3.0mA (max)
• Power supply voltage
: 10 to 20 V
• Threshold input current
: IFLH = 8 mA (max)
• Switching time (tpLH / tpHL)
: 200 ns (max)
• Common mode transient immunity
: 10 kV/μs (min)
• Isolation voltage
: 5000 Vrms (min)
• Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
• UL Recognized : UL1577, File No.E67349
• cUL approved : CSA Component Acceptance Service
No. 5A, File No.E67349
• Option (D4) VDE approved :
EN60747-5-5 (Note 1), EN60065, EN60950-1
EN62368-1(Pending)
Note 1: When a EN60747-5-5 approved type is needed,
please designate the “Option(D4)”
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
1.27±0.2
0.4±0.1
1.25±0.25
9.7±0.3
TOSHIBA 11-5J1
Weight: 0.26 g (t yp .)
11-5J1
Pin Configuration (Top View)
1
2
3
SHIELD
Schematic
6
1: ANODE
2: NC
3: CATHODE
5
4: GND
5: VO (OUTPUT)
4
6: VCC
IF
1+
VF
3-
(Tr1)
ICC 6
VCC
IO 5
(Tr2)
VO
SHIELD
4
GND
Note: A 0.1 µF bypass capacitor must be
connected between pins 6 and 4.
Start of commercial production
2004-04
1
2017-05-19
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