TPD1039F View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
TPD1039F Datasheet PDF : 10 Pages
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TPD1039F
Electrical Characteristics (Tch = 25°C)
Characteristics
Drain-source clamp voltage
High-level input voltage
Low-level input voltage
Drain cut-off current
High-level input current
Drain-source ON-resistance
Protective circuit operation input
Voltage range
Overtemperature detection
(Note 6)
Overcurrent detection
Switching times
Drain-source diode forward
Voltage
Symbol
V (CL)DSS
VIH
VIL
IDSS
IIH
RDS(ON)
Test
Circuit
Test Condition
- VIN = 0 V, ID = 1 mA
1 VDS = 10 to 40 V, ID ≥ 1 A
1 VDS = 10 to 40 V, ID ≤ 10μA
- VIN = 0 V, VDS = 40 V
- VIN = 5 V, at normal operation
- VIN = 5 V, ID = 1 A
VIN(opr)
-
-
TOT
IOC
ton
toff
VDSF
2 VIN = 5 V, VDD = 12 V
3 VIN = 5 V, VDS = 24 V
VDD = 24 V, VIN = 0 V/5 V,
4
RL = 24Ω
- VIN = 0 V, IDR = 1.5 A
Min
Typ. Max Unit
45
-
-
V
3.5
-
6
V
-
-
0.8
-
-
10
μA
-
400 μA
-
-
0.25 Ω
3.5
-
6
V
125
-
-
°C
-
5
-
A
-
15
-
μs
-
45
-
-
0.9
1.8
V
Note 6: Overtemperature protection is tripped at a channel temperature of 125°C.
Ensure that the channel temperature, Tch, does not exceed 125°C under the worst-case conditions.
This feature is intended to protect the device against damage. The device reliability is not guaranteed if the
device persists to remain overtemperature protection mode.
Test Circuit 1
H-level input voltage, L-level input voltage measuring circuit
Test circuit
Measured waveforms
ID
DRAIN
IN
TPD1039F
VIN
SOURCE
VDD = 10 to 40 V
ID
1A
10μA
Test Circuit 2
Overtemperature detection measuring circuit
VIN
VIL VIH
Test circuit
Measured waveforms
RL = 1.2kΩ
DRAIN
IN
TPD1039F
VIN = 5 V
SOURCE
VDD = 12 V
Ta increase
Ta
TOT
VDS
0V
4
11 V
Ta decrease
12 V
1V
2008-03-18
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