NJVMJD45H11RLG(2012) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NJVMJD45H11RLG
(Rev.:2012)

Complementary Power Transistors

ON Semiconductor 

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current − Continuous

− Peak

VCEO

80

Vdc

VEB

5

Vdc

IC

8

Adc

16

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD

W

20

0.16

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD

W

1.75

0.014

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient (Note 1)

Lead Temperature for Soldering

RqJC

RqJA

TL

6.25

71.4

260

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

Unit

°C/W

°C/W

°C

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