UPA801TC-T View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

UPA801TC-T

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

NEC => Renesas Technology 

µPA801TC

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Feedback Capacitance

Insertion Power Gain

Noise Figure

Symbol

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

Conditions

VCB = 10 V, IE = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 7 mANote 1

VCE = 3 V, IC = 7 mA, f = 1 GHz

VCB = 3 V, IE = 0, f = 1 MHzNote 2

VCE = 3 V, IC = 7 mA, f = 1 GHz

VCE = 3 V, IC = 7 mA, f = 1 GHz

MIN.

–

–

70

3.0

–

7.0

–

TYP.

–

–

–

4.5

0.7

9.0

1.2

MAX.

1.0

1.0

250

–

1.5

–

2.5

Unit

µA

µA

GHz

pF

dB

dB

Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

Marking

hFE Value

FB

70

70 to 140

GB

71

125 to 250

2

Data Sheet P14548EJ1V1DS00

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