UPA809T View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

UPA809T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

NEC => Renesas Technology 

µPA809T

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

SYMBOL

CONDITION

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

Emitter Cutoff Current

DC Current Gain

IEBO

VEB = 1 V, IC = 0

hFE

VCE = 1 V, IC = 3 mANote 1

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 3 mA, f = 2 GHz

Gain Bandwidth Product (2)

Feed-back Capacitance

Insertion Power Gain (1)

Insertion Power Gain (2)

fT

Cre

|S21|2

|S21|2

VCE = 3 V, IC = 20 mA, f = 2 GHz

VCB = 1 V, IE = 0, f = 1 MHzNote 2

VCE = 1 V, IC = 3 mA, f = 2 GHz

VCE = 3 V, IC = 20 mA, f = 2 GHz

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

Noise Figure (2)

NF

VCE = 3 V, IC = 7 mA, f = 2 GHz

hFE Ratio

hFE1/hFE2

VCE = 1 V, IC = 3 mA

A smaller value among

hFE of hFE1 = Q1, Q2

A larger value among

hFE of hFE2 = Q1, Q2

MIN.

80

4.0

2.5

0.85

TYP.

4.5

9.0

0.75

3.5

6.5

1.7

1.5

MAX.

0.1

0.1

160

0.85

2.5

UNIT

µA

µA

GHz

GHz

pF

dB

dB

dB

dB

Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

Marking

hFE Value

KB

T88

80 to 160

2

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