UT2312
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
5
A
Pulsed Drain Current
IDM
15
A
Power Dissipation (Ta =25°C)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
MIN
TYP
θJA
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
MAX
100
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID =250 µA
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
IDSS
VDS=20 V, VGS =0 V
IGSS
VGS =±8V, VDS = 0 V
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
Static Drain–Source On–Resistance
On-State Drain Current
RDS(ON)
ID(ON)
VGS =4.5V, ID =5.0 A
VGS =2.5 V, ID =4.0 A
VDS≥10 V, VGS = 4.5 V
Forward Transconductance
gFS
VDS = 5V, ID = 5.0 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS =10V, VGS =0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
QG
QGS
VDS =10V, VGS =4.5V, ID =3.6A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=10V, ID =1A, RL =10Ω
VGEN =4.5V, RG =6Ω
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.0 A,VGS=0 V
Max. Diode Forward Current
IS
Notes: Pulse test; pulse width ≤300μs, duty cycle≤2%
MIN TYP MAX UNIT
20
V
1.0 µA
±100 nA
0.45
25
35
15
20
V
33 mΩ
40 mΩ
A
S
900
pF
140
pF
100
pF
11 14 nC
1.4
nC
2.2
nC
15 25 ns
40 60 ns
48 70 ns
31 45 ns
0.75 1.2 V
1.6 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-205.D