VG36644041DT-7L View Datasheet(PDF) - Vanguard International Semiconductor

Part Name

Description

Manufacturer

VG36644041DT-7L

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor 

VIS

VG36644041DT / VG36648041DT / VG36641641DT

CMOS Synchronous Dynamic RAM

AC Characteristics (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V , VSS = VSSQ = 0V, unless otherwise noted)

Test Conditions

AC input Levels (VIH/VIL)

Input rise and fall time

2.0 / 0.8V

1ns

Input timing reference level /

Output timing reference level

Output load condition

1.4V

50pF

Note): 1.if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.

Output Load Conditions

VDDQ

VOUT

Device

Under

Test

VDDQ

Ω Z = 50

50PF

Document :1G5-0177

Rev.2

Page 7

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