Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-39
0.4A
TO-92
0.2A
* ID (continuous) is limited by max rated Tj.
1.5A
1.0A
Power Dissipation
@ TC = 25°C
6W
1W
θjc
°C/W
21
125
θja
°C/W
125
170
VN0645/VN0650
IDR*
0.4A
0.2A
IDRM
1.5A
1.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Parameter
Min Typ
Drain-to-Source
Breakdown Voltage
VN0650 500
VN0645 450
Gate Threshold Voltage
2
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Max Unit
V
4
V
-4.5 mV/°C
100
nA
10
µA
1 mA
ID(ON)
ON-State Drain Current
0.8
0.5
1.1
RDS(ON)
Static Drain-to-Source
ON-State Resistance
12
11
16
∆RDS(ON)
Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
100
CISS
Input Capacitance
120
130
COSS
Common Source Output Capacitance
20
75
CRSS
Reverse Transfer Capacitance
10
20
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
10
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Ω
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = 2mA
VGS = VDS , ID = 2mA
VGS = VDS , ID = 2mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 100mA
VGS = 10V, ID = 400mA
VGS = 10V, ID = 400mA
VDS = 25V, ID = 400mA
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 0.5A,
RGEN = 25Ω
VGS = 0V, ISD = 0.4A
VGS = 0V, ISD = 0.4A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
7-176
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.