VN10K-TO18 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

Manufacturer

VN10K-TO18

N–CHANNEL ENHANCEMENT MODE MOSFET

Semelab - > TT Electronics plc  

VN10K-TO18

ELECTRICAL RATINGS (Tamb = 25°C unless otherwise stated)

Characteristic

Test Conditions

BVDSS

VGS(TH)

IGSS

STATIC CHARACTERISTICS

Drain – Source Breakdown Voltage

Gate Threshold Voltage

Gate – Source Leakage Current

IDSS

ID(ON)

Zero Gate Voltage Drain Current

On State Drain Current 1

Static Drain – Source

RDS(ON) On-State Resistance 1

gfs Forward Transconductance 1

gos Common Source Output Conductance

VGS = 0V

VDS = VGS

VDS = 0V

VDS = 48V

VDS = 10V

VGS = 5V

VGS = 10V

VDS = 10V

VDS = 7.5V

ID = 100mA

ID = 1mA

VGS = 15V

VGS = 0V

TJ = 125°C

VGS = 10V

ID = 0.2A

ID = 0.5A

TJ = 125°C

ID = 0.5A

ID = 50mA

DYNAMIC CHARACTERISTICS

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VGS = 0V

VDS = 25V

f = 1MHz

SWITCHING CHARACTERISTICS

ton Turn–on Time

toff Turn-off Time

VDD = 15V

ID = 0.6A

VGEN = 10V

RL = 23W

RG = 25W

NOTES:

1) Pulse Test: Pulse Width = 300ms , Duty Cycle £ 2%

THERMAL CHARACTERISTICS

Characteristic

RqJA Thermal Resistance Junction – Ambient when mounted on PCB

Min. Typ. Max. Unit

60 120

V

0.8 1.4 2.5

1 100 nA

0.7 10 mA

3 500

750 1000

mA

4 7.5

3

5W

5.6 9

100 300

mS

200

mS

38 60

16 25 pF

2

5

7 10

ns

9 10

Min. Typ. Max. Unit

400 °C/W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim.10/99

Share Link: