VT2045CBP View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

VT2045CBP

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Vishay Semiconductors 

www.vishay.com

VT2045CBP, VIT2045CBP

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

Instantaneous forward voltage per diode

IF = 5 A

IF = 10 A

IF = 5 A

IF = 10 A

Reverse current per diode

VR = 45 V

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VF (1)

IR (2)

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TYP.

0.44

0.49

0.33

0.41

-

10

MAX.

-

0.58

-

0.52

2000

30

UNIT

V

μA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Typical thermal resistance

per diode

per device

RJC

VT2045CBP VIT2045CBP

3.0

2.0

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AB

VT2045CBP-M3/4W

1.88

TO-2262AA

VIT2045CBP-M3/4W

1.45

PACKAGE CODE

4W

4W

BASE QUANTITY

50/tube

50/tube

DELIVERY MODE

Tube

Tube

Revision: 15-Dec-16

2

Document Number: 89364

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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