XP0411300L(2009) View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
XP0411300L Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP04113
Silicon PNP epitaxial planar type
For digital circuits
■ Features
• Two elements incorporated into one package
/ (Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
e . ■ Basic Part Number
c tage • UNR2113 × 2
n d cle s ■ Absolute Maximum Ratings Ta = 25°C
a e lifecy Parameter
Symbol Rating
Unit
t Collector-base voltage (Emitter open) VCBO
−50
V
n u duc Collector-emitter voltage (Base open) VCEO
−50
V
Pro Collector current
IC
−100
mA
te tin ur Totalpowerdissipation
PT
150
mW
g fo e . Junction temperature
Tj
150
°C
in n followin nce type d ation Storage temperature
Tstg −55 to +150 °C
■ Package
• Code
SMini6-G1
• Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
■ Marking Symbol: 6S
■ Internal Connection
654
Tr1
Tr2
123
Ma isctoinued inlcalnueddesmaaiinntteenniasanccoenttiynpuueeddttyyppoeeut latesnticin.cfoo.rjmp/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C
p m d tin ab so Parameter
Symbol
Conditions
Min Typ Max Unit
iscon ned con RL ana Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−50
/D pla dis g U n.p Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0
−50
e in ico Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
Danc llow em Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
inten it fo w.s Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
Ma e vis ://ww Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
80
as ttp Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
Ple h Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
V
− 0.1 µA
− 0.5 µA
− 0.1 mA
− 0.25 V
V
Output voltage low-level
VOL VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
− 0.2 V
Input resistance
R1
−30% 47 +30% kΩ
Resistance ratio
Transition frequency
R1 / R2
0.8 1.0 1.2
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date:May 2009
SJJ00163CED
1
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